Inductively-Coupled Plasma Reactively Ion Etching (ICP-RIE) System

Tender description

We want to acquire an Inductively-Coupled Plasma Reactively Ion Etching (ICP-RIE) system. The system should be able to etch the surface of samples utilising RIE physical-chemical mechanism. The System will be located in a class 10000 cleanroom space and will be operated by students and technical staff. The System should integrate smoothly with the existing facilities without any prejudice for the normal operation. The main purpose for the System is the definition of silicon and silicon-related waveguide structures for integrated quantum photonics applications. Such structures are typically defined on 6-inch silicon-on-insulator wafers with 220nm-thick crystalline silicon films. The system should excel at verticality (<5 degrees) and smoothness (roughness <5 nm) of side walls. Reproducibility and uniformity over the whole sample size are also crucial in order to ensure the development of a consistent technology.