E-beam Lithography System

Tender description

An Electron Beam Lithography (EBL) system will be used in combination with other cleanroom facilities to pattern resists including HSQ and PMMA to fabricate nano-structures on various materials including optical waveguides in SOI and planar nanowires on superconducting films. The linewidth writing capability of the EBL tool will be of order 10 nm and it will ideally have a functionality that enables large areas to be written that are beyond one field-of-view. The beam-steering system will have at least 18 bit D/A resolution and a pattern generator able to operate at a minimum of 25 MHz. The system will be able to accept small pieces of wafer (of approximately 10 mm × 10 mm size) or up to 4” diameter wafers via a load-lock.